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发明名称
METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE WITH COBALT SILICIDE
摘要
申请公布号
KR100548546(B1)
申请公布日期
2006.02.02
申请号
KR19990058821
申请日期
1999.12.17
申请人
发明人
分类号
H01L21/336;H01L21/28;H01L21/3213;H01L21/44;H01L21/4763;H01L29/49
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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