| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a laser processing method for a wafer on which a plurality of devices are formed, each comprising a stacked body resulting from stacking an insulation film and a function film on the surface of a semiconductor substrate made of silicon or the like, wherein a pulse laser beam is emitted along streets demarcating the wafer to form laser processing grooves, and the size of the laser processing grooves is suppressed so as not substantially to give effect on the devices even on the occurrence exfoliation of the stacked body at both sides of the laser processing grooves. <P>SOLUTION: In the laser processing method wherein the wafer 2 is formed with a plurality of devices 22 each comprising the stacked body resulting from stacking the isolation film and the function film on the surface of the substrate, the pulse laser beam is emitted along the streets 23 for demarcating a plurality of the devices 22 to form the laser processing grooves along the streets 23, and the pulse width of the pulse laser beam is selected to be 100 to 1,000 ns. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
