| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device of a higher integration degree which is better in productivity and by which a pattern such as a hole of a micro-diameter is formed without causing deterioration of productivity due to an increase of the number of processes. SOLUTION: An SiC film 101, a Low-K film 102, a TEOS oxide film 103, and an organic antireflective coating 104 are formed on a semiconductor wafer 100 in this order from a lower side. Moreover, a mask layer 105 with a predetermined opening pattern formed and consisting of an ArF resist is formed on the antireflective coating 104. When the organic antireflective coating 104 is etched through the mask layer 105 from a state of a Figure (a) to obtain a state in a Figure (b), an opening dimension of an opening formed at the antireflective coating 104 is controlled by changing high-frequency power to be applied to generate plasma. COPYRIGHT: (C)2006,JPO&NCIPI
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