| 摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal type short channel DMOS, low in gate resistance and on resistance while being excellent in high-speed switching characteristics and current driving characteristics. SOLUTION: An n<SP>-</SP>-type epitaxial layer 110 is formed in the vicinity of surface of a p-type semiconductor substrate 106, and a p-type well 114 as well as n<SP>+</SP>-type source region 116 are formed in the vicinity of the surface. An on resistance reducing n-type well 134 is formed in the vicinity of surface of the n<SP>-</SP>-type epitaxial layer 110 while n<SP>+</SP>-type drain region 118 is formed in the vicinity of the surface. An n-type buried layer 108 is formed at a part of a boundary between the p-type semiconductor substrate 106 and the n<SP>-</SP>-epitaxial layer 110 whereat at least the p-type well 114 is superposed when it is seen from the upper surface thereof. Further, the p-type buried layer 109 is formed so as to cover the upper surface of the n-type buried layer 108 so that at least a part of the n-type buried layer 108 is contacted with the n<SP>-</SP>-type epitaxial layer 110. COPYRIGHT: (C)2006,JPO&NCIPI
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