发明名称 APPARATUS FOR DEPOSITING FILM
摘要 PROBLEM TO BE SOLVED: To perform proper gas evacuation in a film depositing apparatus for processing of depositing a film, by alternately supplying first material gas and second material gas into a reaction container in which a substrate is conveyed and evacuating unreacted gas into a gas treatment facility. SOLUTION: When the first material gas is supplied to the reaction vessel, the reaction vessel is exhausted by a first vacuum evacuation means via a first vacuum evacuation passage, and the gas is sent to the gas treatment facility via a first exhaust passage. Moreover, when the second material gas is supplied to the reaction vessel, a channel is switched by a switching means, vacuum evacuation is performed by a second vacuum evacuation means through a second vacuum evacuation passage, and the gas is sent to the gas treatment facility via a second exhaust passage. In this case, the generation of a reactant by the mixture of the material gases in the exhaust passage can be suppressed, and clean gas evacuation can be performed. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006032610(A) 申请公布日期 2006.02.02
申请号 JP20040208597 申请日期 2004.07.15
申请人 TOKYO ELECTRON LTD 发明人 MATSUURA HIROYUKI
分类号 H01L21/31;C23C16/455;H01L21/285;H01L21/318 主分类号 H01L21/31
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