| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device capable of performing a stable reading operation. SOLUTION: This ferroelectric memory device is provided with a voltage source for generating a predetermined voltage, first and second bit lines, a first ferroelectic capacitor having one end electrically connected to the first bit line, a first resistor disposed between the first bit line and the voltage source, a second ferroelectric capacitor having one end electrically connected to the second bit line, a second resistor disposed between the second bit line and the voltage source, and a sense amplifier disposed between the voltage source and the second bit line to determine data written in the first ferroelectric capacitor on the basis of the potential of the first bit line, according to timing of a change in the potential of the second bit line, when a predetermined voltage is supplied to the first and second bit lines. Thus, the problem of the conventional FeRAM where the fatigue characteristics of a ferroelectric substance constituting a memory cell deteriorates significantly, since a high voltage is applied to the memory cell is solved. COPYRIGHT: (C)2006,JPO&NCIPI
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