发明名称 |
Method of forming a semiconductor device and structure thereof |
摘要 |
In one embodiment, a method for forming a semiconductor device is described. A semiconductor substrate has a first portion and a second portion. A first dielectric layer formed over the first portion of the semiconductor substrate and a second dielectric layer is formed over the second portion of the semiconductor substrate. A cap that may include silicon, such as polysilicon, is formed over the first dielectric layer. A first electrode layer is formed over the cap and a second electrode layer is formed over the second dielectric.
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申请公布号 |
US2006024893(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20040902218 |
申请日期 |
2004.07.29 |
申请人 |
MIN BYOUNG W;CAVE NIGEL G;KOLAGUNTA VENKAT R;ZIA OMAR;GOKTEPELI SINAN |
发明人 |
MIN BYOUNG W.;CAVE NIGEL G.;KOLAGUNTA VENKAT R.;ZIA OMAR;GOKTEPELI SINAN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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