| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a nitride semiconductor HFET structure using an InGaN channel with high quality such as the steepness of a boundary or the like or a barrier layer having high band offset, and to improve the reproducibility of manufacture of an HFET structure. SOLUTION: The nitride semiconductor element structure has an In<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) layer, a nitride semiconductor intermediate layer thereon, and an AlN layer thereon. In addition, the nitride semiconductor element structure has an In<SB>x</SB>Ga<SB>1-x</SB>N (0≤x≤1) layer on a nitride semiconductor thin film and an AlN layer thereon. The In<SB>x</SB>Ga<SB>1-x</SB>N layer is made of a multilayer film with a different composition. The nitride semiconductor intermediate layer is made of GaN, or AlN, or Al<SB>x</SB>Ga<SB>1-x</SB>N, or their multilayer film. COPYRIGHT: (C)2006,JPO&NCIPI
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