| 摘要 |
PROBLEM TO BE SOLVED: To raise a breakdown voltage between a collector and an emitter and an early voltage by setting the collector resistance of a collector lead-out region to low resistance in a vertical type pnp transistor. SOLUTION: A semiconductor device comprises a semiconductor substrate 1 having a semiconductor layer of one conductivity type, a first collector layer 5b of an opposite conductivity type having an annular region 3b where conductivity is raised inside a semiconductor layer, a second collector layer 8b of the opposite conductivity type provided above the first collector layer 5b inside the semiconductor layer, a base layer 14 of one conductivity type provided inside the second collector layer 8b above a region 3c of low conductivity on the inner side of the annular region 3b of the first collector layer 5b, and an emitter layer 16 of the opposite conductivity type provided inside the base layer 14. Thus, the collector region 3c of a low impurity concentration is provided right below the base layer, and the collector resistance is set to the low resistance by the annular collector region 3b where the impurity concentration is increased around the collector region. COPYRIGHT: (C)2006,JPO&NCIPI
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