| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device a gate electrode of which includes a silicide layer with a uniform thickness and a low resistance, and also provide its manufacturing method. SOLUTION: Before depositing a high melting point metal to be silicified, edge chamfering is executed to avoid production of burrs on the upper face of the gate electrode, and then silicification is carried out so as to relax concentration of a film stress caused at heat treatment, thereby forming the silicide layer with a uniform and sufficient thickness. COPYRIGHT: (C)2006,JPO&NCIPI
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