SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent deterioration in transistor performance by preventing an interface state from being generated due to the nitriding of an oxide film and a silicon interface of a sidewall. SOLUTION: A semiconductor device includes a gate electrode 104 formed on a substrate 101, an oxide film 105 serving as a first sidewall and a nitride film 106 serving as a second sidewall formed on the sidewall of the gate electrode 104, and a low concentration impurity diffusion region 107 and a high concentration impurity diffusion region 109 formed in the region of the substrate 101 located on the side of the gate electrode 104. A nitrogen concentration on the interface is 1×1020cm-3or less between the oxide film 105 as the first sidewall and the low concentration impurity diffusion region 107. Thus, the quantity of the interface state generated at the interface is reduced between the region 107 and the oxide film 105 as the first sidewall, thereby suppressing the formation of a depletion layer in the low concentration impurity diffusion region caused by the interface state and preventing deterioration in transistor performance. COPYRIGHT: (C)2006,JPO&NCIPI