发明名称 METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide techniques of producing a nitride single crystal by which a high-quality nitride single crystal can be produced by a sublimation method. SOLUTION: A source material 9 for a nitride single crystal is heated and sublimated in a heating furnace 1, and the sublimated source material is crystallized on a seed crystal 7 disposed in the furnace to grow a single crystal. In the above method for producing a nitride single crystal, a mixture source material preliminarily prepared by mixing an appropriate amount of carbon in aluminum nitride as a source material is heated and sublimated. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006027988(A) 申请公布日期 2006.02.02
申请号 JP20040213287 申请日期 2004.07.21
申请人 UNIV WASEDA;FUJIKURA LTD 发明人 ICHINOSE NOBORU;MIYAZAWA SHINTARO;MABUCHI TOSHIAKI;SANADA KAZUO
分类号 C30B29/38 主分类号 C30B29/38
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