| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method, utilizing proximity effect correction capable of suppressing degradation of exposure margin. <P>SOLUTION: The charge particle beam exposure method emits a charge particle beam by a prescribed exposure, and exposes a resist layer in a plurality of patterns. The method comprises (1) a first correction process of correcting the exposure of each pattern to the exposure capable of coping with a desired pattern size, on the basis of the storage energy profile of the resist layer in the case of exposure by a reference exposure; (2) a second correction process of extracting the pattern, in which the inclination of the pattern edge position of the storage energy profile when the exposure by the corrected exposure becomes less than a prescribed reference value, and correcting the pattern so as to reduce the size of the extracted pattern; (3) a third correction process of correcting the exposure of the pattern-corrected pattern to the exposure capable of coping with the desired pattern size, on the basis of the storage energy profile of the pattern-corrected pattern; and (4) an exposure process of performing the exposure in the pattern-corrected pattern size by the exposure corrected in the first and third correction processes. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
