SEMICONDUCTOR MEMORY DEVICE AND ITS FABRICATION PROCESS

摘要

PROBLEM TO BE SOLVED: To realize a highly reliable semiconductor capable of operating stably by equalizing the capacitance of respective capacitive elements even when the capacitive elements provided on a substrate and having a recessed spatial structure employing a ferroelectric or a high dielectric as a capacitance insulating film have different heights.

SOLUTION: While taking account of the difference between the height h1 of a first opening 27a and the height h2 of a second opening 27b, a surface area at the flange portion 32a of a first capacitive element 23a is set larger than the surface area at the flange portion 32b of a second capacitive element 23b thus correcting the surface area of a first lower electrode 20a to be equalized with the surface area of a second lower electrode 20b. Consequently, the capacitance of the first capacitive element 23a can be equalized with that of the second capacitive element 23b.

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