| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor luminous element that never shows thyristor characteristics. <P>SOLUTION: The semiconductor luminous element is provided with a first trap relaxing layer 1 adhered onto a GaP substrate 100 through a first adhesive layer 101, a first clad layer 103 laminated and formed on the first trap relaxing layer 102, a luminous layer 104 laminated and formed on the first clad layer 103, a second clad layer 105 laminated and formed on the luminous layer 104, a second trap relaxing layer 106 laminated and formed on the second clad layer 105, a GaP window layer 108 which adheres to the second trap relaxing layer 106 through a second adhesive layer 107 and is provided on the surface side of the luminous layer 104, and electrodes 109, 110. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
