| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress an extra decrease in film by dishing by an excessive polishing and an erosion caused in manufacturing a semiconductor device using chemical mechanical polishing. <P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a first insulating film patterned on a semiconductor substrate, forming a groove with the first insulating film used as a mask, forming a second insulating film so as to embed the formed groove, removing a part of the second insulating film with a first CMP using a first slurry to the extent that the surface of the first insulating film is exposed, and removing the second insulating film on the first insulating film not removed by the first CMP and the first insulating film with a second CMP using a second slurry. The first slurry and the second slurry satisfy a specific relation. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
