| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enhance the reliability and yield of a semiconductor device in a method for manufacturing a semiconductor device having a through electrode. <P>SOLUTION: A via hole 16 is formed to penetrate a semiconductor substrate 10 at a position corresponding to a pad electrode 11. An insulating film 17 is formed on the rear surface of the semiconductor substrate 10 including the via hole 16. On the rear surface of the semiconductor substrate 10, an insulating film 18 for reinforcement having an overhang portion 18a at the edge of the opening of the via hole 16 is formed. The insulating film 18 for reinforcement is then used as a mask for removing the insulating film 17 by etching while leaving the insulating film 17 on the sidewall of the via hole 16. Thereafter, a through electrode 21, a wiring layer 22 and a conduction terminal 24 are formed on the rear surface of the semiconductor substrate 10 including the via hole 16. Finally, the semiconductor substrate 10 is separated into semiconductor chips 10A by dicing. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
