发明名称 METHOD AND APPARATUS OF ELECTRON BEAM LITHOGRAPHY
摘要 PROBLEM TO BE SOLVED: To provide a method and an apparatus of electron beam lithography which can perform an accurate lithography and maintain throughput with a low cost even when there is an atmospheric pressure change. SOLUTION: The method of electron beam lithography which performs the lithography at a sample with an electron beam includes the steps of sequentially measuring an atmospheric difference from the atmospheric pressure measured at the previous lithographic calibration time and a lapse time from the previous lithographic calibration time, and performing the calibration of the lithographic accuracy when the proportion of the atmospheric pressure difference to the lapse time is an atmospheric pressure change rate specified value or more. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006032616(A) 申请公布日期 2006.02.02
申请号 JP20040208692 申请日期 2004.07.15
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 AOKI YASUKO;TAWA SUSUMU;SASE YOSHIMITSU
分类号 H01L21/027;H01J37/16;H01J37/305 主分类号 H01L21/027
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