发明名称 |
METHOD AND APPARATUS OF ELECTRON BEAM LITHOGRAPHY |
摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus of electron beam lithography which can perform an accurate lithography and maintain throughput with a low cost even when there is an atmospheric pressure change. SOLUTION: The method of electron beam lithography which performs the lithography at a sample with an electron beam includes the steps of sequentially measuring an atmospheric difference from the atmospheric pressure measured at the previous lithographic calibration time and a lapse time from the previous lithographic calibration time, and performing the calibration of the lithographic accuracy when the proportion of the atmospheric pressure difference to the lapse time is an atmospheric pressure change rate specified value or more. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006032616(A) |
申请公布日期 |
2006.02.02 |
申请号 |
JP20040208692 |
申请日期 |
2004.07.15 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
AOKI YASUKO;TAWA SUSUMU;SASE YOSHIMITSU |
分类号 |
H01L21/027;H01J37/16;H01J37/305 |
主分类号 |
H01L21/027 |
代理机构 |
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