| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device capable of activating impurities, after a layer that is not immune to heat treatment is formed at a high temperature. SOLUTION: The activation of an impurity region in a semiconductor substrate is carried out by means of emission of an electromagnetic wave whose principal spectrum peak exists in a wavelength region of 1.1μm or shorter. Since the electromagnetic wave as above is absorbed in a silicon substrate at a higher absorbing coefficient, and a region desirably activated being only a small portion of the substrate can be locally heated, in comparison with the heat treatment by electromagnetic waves around infrared rays, such as a W halogen lamp of prior arts; the temperature of a region employing a non high-temperature immunity material that is not immune to heat can be kept to be 400°C or lower. Thus, it is possible to activate the impurity after forming a metallic layer, or a metallic alloy layer, and an inter-layer insulation film on the semiconductor substrate or to activate the impurity, after a process of cladding an adhesive coating film and a support substrate to the semiconductor substrate. COPYRIGHT: (C)2006,JPO&NCIPI
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