发明名称 |
Method of sealing low-k dielectrics and devices made thereby |
摘要 |
Methods for sealing porous low-k dielectrics, and devices made thereby, are described, comprising treating the porous low-k dielectrics by atomic layer deposition so as to seal the pores. ALD reactants are chosen in part based on their size, such that they do not deeply penetrate the interconnected pore structures of the dielectrics.
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申请公布号 |
US2006022348(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20050204613 |
申请日期 |
2005.08.15 |
申请人 |
ABELL THOMAS J;SHUHMACHER JORG;SHAMIRYAN DENIS |
发明人 |
ABELL THOMAS J.;SHUHMACHER JORG;SHAMIRYAN DENIS |
分类号 |
H01L23/48;C23C16/40;C23C16/455;H01L21/314;H01L21/316;H01L21/768;H01L21/8238;H01L23/52;H01L23/532 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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