| 摘要 |
A solid state imaging device comprises a semiconductor substrate defining a two-dimensional surface, a plurality of photoelectric conversion elements disposed in a light receiving area of said semiconductor substrate in a plurality of rows and columns, color filters in a plurality of colors, each color filter being arranged in correspondence with each photoelectric conversion element, wherein at least a color defining resolution corresponds to two photoelectric conversion elements adjacent to each other in a horizontal direction or in a vertical direction, a vertical electric charge transferring device that vertically transfers signal electric charges generated by the photoelectric conversion elements, a horizontal electric charge transfer device that horizontally transfers the signal electric charges transferred by the vertical electric charge transferring device, and an output device that outputs the signal electric charges transferred by the horizontal electric charge transferring device.
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