发明名称 |
ULTRA-THIN BODY SUPER-STEEP RETROGRADE WELL (SSRW) FET DEVICES |
摘要 |
A method of manufacture of a Super Steep Retrograde Well Field Effect Transistor device starts with an SOI layer formed on a substrate, e.g. a buried oxide layer. Thin the SOI layer to form an ultra-thin SOI layer. Form an isolation trench separating the SOI layer into N and P ground plane regions. Dope the N and P ground plane regions formed from the SOI layer with high levels of N-type and P-type dopant. Form semiconductor channel regions above the N and P ground plane regions. Form FET source and drain regions and gate electrode stacks above the channel regions. Optionally form a diffusion retarding layer between the SOI ground plane regions and the channel regions.
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申请公布号 |
US2006022270(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20040710736 |
申请日期 |
2004.07.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOYD DIANE C.;HOLT JUDSON R.;IEONG MEIKEI;MO RENEE T.;REN ZHIBIN;SHAHIDI GHAVAM G. |
分类号 |
H01L27/01 |
主分类号 |
H01L27/01 |
代理机构 |
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代理人 |
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地址 |
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