发明名称 |
SEMICONDUCTOR DEVICE INCLUDING A CONDUCTIVE LAYER BURIED IN AN OPENING AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A trench capacitor is formed in a semiconductor substrate via a capacitor insulating film. The trench has a conductive layer for storage node electrode buried in a trench. The conductive layer includes a first, a second, and third conductive layers. The first conductive layer is buried in a lower portion of the trench. The second conductive layer is buried in a recess on the upper surface of the first conductive layer. The third conductive layer is buried to contact with the first and second conductive layers. |
申请公布号 |
WO2006011632(A2) |
申请公布日期 |
2006.02.02 |
申请号 |
WO2005JP14138 |
申请日期 |
2005.07.27 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;INOUE, HIROFUMI;SHINOHE, MASAHITO |
发明人 |
INOUE, HIROFUMI;SHINOHE, MASAHITO |
分类号 |
H01L21/8242;H01L21/768 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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