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发明名称
METHOD OF FORMING AN INTERLAYER INSULATING LAYER IN A SEMICONDUCTOR DEVICE
摘要
申请公布号
KR20060010449(A)
申请公布日期
2006.02.02
申请号
KR20040059152
申请日期
2004.07.28
申请人
HYNIX SEMICONDUCTOR INC.
发明人
KIM, SANG DEOK
分类号
H01L27/115;H01L21/31
主分类号
H01L27/115
代理机构
代理人
主权项
地址
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