发明名称 |
Ion implantation apparatus and method for implanting ions by using the same |
摘要 |
Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, includes: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion beam in the directions of an X-axis and an Y-axis; a second quadrupole magnet assembly for converging and diverging the ion beam passing through the scanner in the directions of the X- and Y-axes; and a beam parallelizer for rotating the ion beam in synchronization with the second quadrupole magnet assembly, thereby implanting the ion beam into the wafer.
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申请公布号 |
US2006022149(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20040028003 |
申请日期 |
2004.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
ROUH KYOUNG-BONG;JIN SEUNG-WOO;LEE MIN-YONG |
分类号 |
H01J37/08;H01J37/147;H01J37/317;H01L21/265 |
主分类号 |
H01J37/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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