| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a storage node contact of a semiconductor device preventing mismatching between a landing plug contact and a storage node contact and improving contact resistance. <P>SOLUTION: A method of forming a storage node contact of a semiconductor device includes: a step of forming an oxide film 26 and a landing plug contact between gates of a semiconductor substrate 21 with a plurality of gates 23 and source/drain regions 25 formed; a step of forming an interlayer insulating film 29 on the entire surface of the semiconductor substrate including the landing plug contact and the gates; a step of forming a first storage node contact hole exposing the landing plug contact by etching the interlayer insulating film; a step of removing the exposed landing plug contact and the oxide film and forming a second storage node contact hole; and a step of forming a storage node contact 30 by embedding polysilicon in the second storage node contact hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
