SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of a corrosion in a metallic wiring for an internal circuit element even after a redundancy relief is conducted without increasing the area of a semiconductor device generated with an increase in an integration degree, in the semiconductor device in the logic semiconductor device with a semiconductor storage device having a redundancy relief function.

SOLUTION: A semiconductor integrated circuit device has the internal circuit elements 26 containing circuit elements formed on a semiconductor substrate 10 and redundancy-relieved; first, second and third interlayer insulating films 15, 18 and 21 formed so as to coat the internal circuit elements 26 on the semiconductor substrate 10; and a fuse 25 used for the redundancy-relief of the circuit elements 26 formed on the third interlayer insulating film 21 and redundancy-relieved. An insulating film 22 having a water permeability resistance is interposed between the third interlayer insulating film 21 and the fuse 25.

COPYRIGHT: (C)2006,JPO&NCIPI