| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which suppresses cell leakage in a DRAM cell and is also suitable for microminiaturization. <P>SOLUTION: After a silicon oxide film 17 is formed in a predetermined region on the inner wall of a trench formed in a semiconductor substrate 11, wherein the silicon oxide film 17 contains the impurity of a conductivity type that is opposite to that of the semiconductor substrate 11, the silicon oxide film 17 is covered with an insulating film 19 containing the impurity of a conductivity type that is the same as the semiconductor substrate 11. Then, after the semiconductor substrate 11 is heat treated and the impurity of the conductivity type opposite to that of the semiconductor substrate 11 and an impurity of the conductivity type same as the substrate 11 are diffused in the substrate 11, the insulating film 19 and the silicon oxide film 17 are successively exfoliated to form a plate 20 to be a plate electrode. Then, after an insulating and separating film is formed and an electrically conductive film is embedded in the trench, a transistor consisting of a gate, a drain and a source is formed at a predetermined region. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
