| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high luminance light emitting diode which is manufactured inexpensively with high yield while exhibiting excellent productivity as compared with a conventional light emitting diode provided with a current block layer. <P>SOLUTION: In a light emitting diode having such a structure as a light emitting part sandwiching at least an active layer 5 between an n-type clad layer 4 and a p-type clad layer 6 is formed on a substrate 1, an ohmic contact layer 7 containing conductivity determining impurities in high concentration is formed thereon, a transparent conductive film 8 is formed thereon, and a surface electrode 9 and a back electrode 10 are formed, respectively, on the surface side and the back side thereof, a metallic current block layer 11 is provided between the light emitting part and the transparent conductive film 8 in a surface region substantially not matching the surface electrode 9 of light emitting diode. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
