发明名称 HIGH FREQUENCY POWER AMPLIFIER
摘要 PROBLEM TO BE SOLVED: To improve the linearity of a high frequency power amplifier employing a bipolar transistor in high output operation. SOLUTION: An impedance circuit 12 is connected with the base terminal of a bias supply transistor and a resistor 5 for suppressing current runaway is connected through the impedance circuit 12 thus supplying a base bias. Linearity of a power amplifier can be improved by regulating the high frequency current waveform being injected into the resistor 5 by the impedance circuit 12 and reducing voltage drop across the resistor 5. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006033134(A) 申请公布日期 2006.02.02
申请号 JP20040205649 申请日期 2004.07.13
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 NAKAMURA MORIO
分类号 H03F1/32;H03F3/19;H03F3/24 主分类号 H03F1/32
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