发明名称 |
HIGH FREQUENCY POWER AMPLIFIER |
摘要 |
PROBLEM TO BE SOLVED: To improve the linearity of a high frequency power amplifier employing a bipolar transistor in high output operation. SOLUTION: An impedance circuit 12 is connected with the base terminal of a bias supply transistor and a resistor 5 for suppressing current runaway is connected through the impedance circuit 12 thus supplying a base bias. Linearity of a power amplifier can be improved by regulating the high frequency current waveform being injected into the resistor 5 by the impedance circuit 12 and reducing voltage drop across the resistor 5. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006033134(A) |
申请公布日期 |
2006.02.02 |
申请号 |
JP20040205649 |
申请日期 |
2004.07.13 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
NAKAMURA MORIO |
分类号 |
H03F1/32;H03F3/19;H03F3/24 |
主分类号 |
H03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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