发明名称 PLATING METHOD AND PLATING DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent the abnormality in the quality of a wafer caused by the non-conduction of plating current at the time when the wafer is subjected to plating treatment. SOLUTION: At the time when a wafer 54 is subjected to plating treatment, the voltage of the main power source 19 is detected. In the case the voltage of the main power source 19 exceeds set voltage, and the state continues for a fixed main power source voltage abnormality false detecting prevention time or longer, the wafer 54 is recovered. In this way, when the abnormality of the voltage is generated in the main power source 19 at the time of the plating treatment, the wafer 54 is recovered. At the start of the plating treatment, when an auxiliary power source 20 is made OFF more slowly than the ON time of the main power source 19, even if the feed of a plating liquid is delayed, the generation of a temporary non-conduction state can be evaded. Upon the end of the plating treatment, when the auxiliary power source 20 is made ON more speedily than the OFF time of the main power source 19, the generation of a temporary non-conduction state can be evaded. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006028595(A) 申请公布日期 2006.02.02
申请号 JP20040210246 申请日期 2004.07.16
申请人 TDK CORP 发明人 YODA TAKURO;ASAHARA HIDEKI;SOTOZONO TAKEHIKO;ISOBE MITSUHARU
分类号 C25D21/12;C25D7/00;C25D17/00 主分类号 C25D21/12
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