发明名称 Semiconductor memory device
摘要 A semiconductor memory device including a read and a write structures are provided. The read structure includes: a core sense amplifier part for amplifying data applied on data buses of a core area; a read multiplexing part for multiplexing the output data of the core sense amplifier part according to data width options and transferring the multiplexed data to a peripheral area through data buses; and a data output part for transferring the data of the data buses to a plurality of data I/O pins. The write structure includes: a data input part for transferring data applied on a plurality of data I/O pins to a core area through data buses; a write multiplexing part for multiplexing the data of the data buses according to data width options; and a core driver part for driving the output data of the write multiplexing part to data buses of the core area.
申请公布号 US2006023533(A1) 申请公布日期 2006.02.02
申请号 US20040017670 申请日期 2004.12.22
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 SONG SEONG-HWI
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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