| 摘要 |
PROBLEM TO BE SOLVED: To suppress the cracking of an insulating substrate of a semiconductor device and the embrittling of lead-free solder. SOLUTION: The semiconductor device 1 is a semiconductor power module comprising a rectangular metal base 2, the rectangular insulating substrate 3 which is provided on the 1st main surface of the metal base 2 and smaller in area than the metal base 2, a lower electrode 4 which is bonded to the 2nd main surface of the insulating substrate 3 with the insulating substrate 3, a lead-free solder film 5 which bonds the lower electrode 4 and metal base 2 together, an upper electrode 7 provided on the 1st main surface of the insulating substrate 3, semiconductor elements 6a and 6b provided on the 1st main surface of the upper electrode 7, a bonding wire 9 which electrically connects the upper electrode 7 to the semiconductor elements 6a and 6b, and projections 12 which are formed on the 1st main surface of the metal base 2 opposite four corners of the insulating substrate 3. COPYRIGHT: (C)2006,JPO&NCIPI |
