发明名称 |
Dry etching method using polymer mask selectively formed by CO gas |
摘要 |
A dry etching method comprises placing a semiconductor substrate in a reactor, the semiconductor substrate comprising a photoresist pattern formed on an etching target layer, supplying carbon monoxide gas into the reactor to selectively deposit polymer on the photoresist pattern to form a polymer layer, and etching the etching target layer using the photoresist pattern and the polymer layer as an etch mask.
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申请公布号 |
US2006024971(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20050193199 |
申请日期 |
2005.07.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WAN-JAE;CHANG HO-SEN;OH YOUNG-MOOK |
分类号 |
H01L21/461;H01L21/302 |
主分类号 |
H01L21/461 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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