| 摘要 |
The semiconductor device comprises a semiconductor substrate 10 with a trench 16 a and a trench 16 b formed in; a device isolation film 32 a buried in the trench 16 a and including a liner film including a silicon nitride film 20 and an insulating film 28 of a silicon oxide-based insulating material; a device isolation film 32 b buried in the bottom of the trench 16 b; and a capacitor formed on a side wall of an upper part of the second trench 16 b and including an impurity diffused region 40 as a first electrode, a capacitor dielectric film 43 of a silicon oxide-based insulating film and a second electrode 46.
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