发明名称 |
Image sensor with improved charge transfer efficiency and method for fabricating the same |
摘要 |
An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.
|
申请公布号 |
US2006022205(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20050192851 |
申请日期 |
2005.07.25 |
申请人 |
PARK JAE-YOUNG;LIM YOUN-SUB |
发明人 |
PARK JAE-YOUNG;LIM YOUN-SUB |
分类号 |
H01L21/00;H01L27/146;H01L31/10;H04N5/374;H04N5/3745 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|