| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solid state imaging device and its manufacturing method capable of attaining the high sensitivity of a pixel while securing matching with a manufacturing process of peripheral circuit transistors, in a solid state imaging device where a color pixel array is formed in an ordinary well and a black pixel array is formed in a well in a double well. <P>SOLUTION: The imaging device comprises color pixels each including a photodiode formed in a first well and a first read transistor; and black pixels each including a photodiode formed in a second well that is a double well and a second read transistor. The first well includes an embedded impurity layer at a well bottom part of a region where the first read transistor is formed, and the second well includes embedded impurity layers at well bottoms of a region where the photodiode is formed and a region where the second transistor is formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
