| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystal silicon thin film resistive element which enhances a variation and the ratio precision of a resistance value and aging characteristics without increasing a footprint. SOLUTION: Upper faces, side faces and lower faces of all regions in at least the long-side direction of the high resistive region of the polycrystal silicon thin film resistive element are enclosed with a semiconductor substrate and metal. COPYRIGHT: (C)2006,JPO&NCIPI
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