| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of preventing the side of a gate electrode from being exposed due to the etching of an oxide film for constituting a sidewall at the time of contact etching, in the semiconductor device with the sidewall composed of the oxide film and a multilayer nitride film. SOLUTION: The semiconductor device comprises a gate insulating layer formed on the semiconductor substrate; a gate electrode formed on the gate insulating layer; a first nitride film formed on the gate electrode; and sidewalls each composed of the first oxide film formed at the side of the gate electrode and the first nitride film in order, a second nitride film, a second oxide film, and a third nitride. The upper outer diameter of the first nitride film is smaller than that of a lower outer diameter. The side of the gate electrode of the first oxide film is partially covered with the second nitride film when viewed from the upper surface. The side of the gate electrode of the second oxide film is partially covered with the third nitride film when viewed from the upper surface. COPYRIGHT: (C)2006,JPO&NCIPI
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