发明名称 |
CHEMICAL VAPOR PHASE GROWING DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a chemical vapor phase growing device in which a structure of a reaction chamber is simplified and which is superior in maintenance property. SOLUTION: As for a lower plate 2 for supporting substrates 1, the main faces are arranged to become almost parallel. A rotation shaft 3 rotates the lower plate 2 in an almost horizontal plane. Supply ports 17 for supplying a plurality of types of reactant gases into the reaction chamber are arranged on sides of the reaction chamber. An exhaust port 18 for exhausting the reactant gas outside the reaction chamber is disposed to be confront with an almost center of the lower plate 2. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006032459(A) |
申请公布日期 |
2006.02.02 |
申请号 |
JP20040205753 |
申请日期 |
2004.07.13 |
申请人 |
SHINDENGEN ELECTRIC MFG CO LTD |
发明人 |
NISHIKAWA KOICHI;MAEYAMA YUSUKE;FUKUDA YUSUKE;SHIMIZU MASAAKI;IWAGURO HIROAKI |
分类号 |
H01L21/205;C23C16/455 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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