| 摘要 |
PROBLEM TO BE SOLVED: To provide a reverse sputtering method and a film deposition apparatus capable of consistently performing the reverse sputtering in a substrate stage to incline, turn, cool or heat the substrate. SOLUTION: Ar gas is introduced as sputtering gas from a gas introduction pipe 106 for sputtering, and the pressure in a chamber 101 is regulated to 0.5-10 Pa by a variable conductance valve 114. The pulse voltage is applied to the substrate stage 102 by a pulse DC power supply 109. After a surface of the substrate 108 is subjected to the reverse sputtering of the predetermined quantity, application of the voltage by the pulse DC power supply 109 is stopped. COPYRIGHT: (C)2006,JPO&NCIPI
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