发明名称 |
Flash memory unit and method of programming a flash memory device |
摘要 |
Disclosed are a flash memory unit and a method of programming a flash memory device. The method of programming can include applying respective programming voltages to a control gate and a drain of the memory device. A source bias potential can be applied to a source of the memory device. The application of the source bias potential can be controlled with the selective application of one of the programming voltages to a source bias switching device.
|
申请公布号 |
US2006023511(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20040909693 |
申请日期 |
2004.08.02 |
申请人 |
WANG ZHIGANG;YANG NIAN;LIU ZHIZHENG |
发明人 |
WANG ZHIGANG;YANG NIAN;LIU ZHIZHENG |
分类号 |
G11C16/04;G11C11/34;G11C16/12 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|