| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a tantalum oxide film from being made a thin film in the vicinity of the upper end of a lower electrode and of preventing leakage from happening between a lower electrode and an upper electrode at that portion. <P>SOLUTION: The semiconductor device comprises a silicon oxide film having a recess, a lower electrode formed in the recess, a silicon nitride film provided in the vicinity of the upper end of the lower electrode, the tantalum oxide film formed to cover the lower electrode, and the upper electrode formed on the tantalum oxide film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
