| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a W based metal thin film as a barrier metal film having low specific resistance, having excellent adhesion to an oxide film and a Cu wiring film, and does not damage the reliability of Cu wiring at low temperature even without performing plasma pretreatment. SOLUTION: The film is deposited by a CAT-ALD (atomic layer deposition) process composed of: a step where a gaseous starting material (e.g., gaseous WF<SB>6</SB>, W(CO)<SB>6</SB>or the like) is introduced into a vacuum chamber 102; and a step where a reactive gas (e.g., gaseous H<SB>2</SB>, NH<SB>3</SB>, SiH<SB>4</SB>, NH<SB>2</SB>NH<SB>2</SB>or the like) containing hydrogen atoms in the chemical structure is brought into contact with a catalytic body 108 so as to be an active species, and it is introduced into the vacuum chamber 102. COPYRIGHT: (C)2006,JPO&NCIPI
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