发明名称 STEPPED TIP JUNCTION WITH SPACER LAYER
摘要 Embodiments of the invention provides a stepped tip junction region between a source/drain region of a transistor and a gate. In some embodiments, a spacer of the transistor includes a tip junction spacer layer and a source/drain spacer lacer.
申请公布号 WO2005117130(A3) 申请公布日期 2006.02.02
申请号 WO2005US14969 申请日期 2005.04.29
申请人 INTEL CORPORATION;BAN, IBRAHIM;SELL, BERNHARD;NATARAJAN, SANJAY;BOHR, MARK 发明人 BAN, IBRAHIM;SELL, BERNHARD;NATARAJAN, SANJAY;BOHR, MARK
分类号 H01L29/78;H01L21/336;H01L29/76 主分类号 H01L29/78
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