Laterales Leistungs-MOSFET mit einer Metallschicht zur Verminderung des verteilten Widerstandes und Verfahren zur Herstellung

摘要

To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.