MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a member material for a semiconductor manufacturing apparatus using a sialon sintered compact which has a coefficient of thermal expansion equal to that of silicon nitride, is dense, has the small maximum void diameter and more enhanced workability than silicon nitride.

SOLUTION: The member for the semiconductor manufacturing apparatus is composed of the β-sialon sintered compact and has a relative density of ≥90%, a maximum void diameter of ≤30 μm, a Young's modulus of ≥250 GPa, a coefficient of thermal expansion at room temperature of 1.4×10-6/°C±0.30×10-6/°C and its prescribed machining speed is ≥1.5 times that of the prescribed dense silicon nitride sintered compact. The β-sialon sintered compact is produced by adding and mixing an aluminum oxide powder to a silicon nitride powder of ≥14 m2/g in specific surface area in such a manner that the Z value in chemical formula Si6-zAlzOzN8-zattains ≥2 and ≤3, molding the resultant powder mixture under prescribed pressure and firing the molding at 1,600 to 1,800°C.

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