| 摘要 |
PROBLEM TO BE SOLVED: To disclose a method and an apparatus for inspecting leakage current characteristics of a dielectric film formed on a selected cell block in a cell array region of a semiconductor wafer. SOLUTION: A corona charger 120 charges a corona-ion charge on the selected cell block, and a measurement probe chosen from a plurality of measurement probes measures the variation of the surface potential of the dielectric film. A probe control unit 142 chooses a measurement probe from the plurality of the probes depending on the size of the cell block, and the probe chosen is arranged on the selected cell block using image data of the semiconductor wafer. A data processing unit 160 determines leakage current characteristics of the dielectric film by comparing a measured spectrum indicating the measured variation of the surface potential with preset reference data. Therefore, the leakage current characteristics of the dielectric film on each selected cell block can be easily inspected. COPYRIGHT: (C)2006,JPO&NCIPI |
