| 摘要 |
A spin-on dielectric ( 120 ) strip process. Instead of a wet strip, a dry strip process is used to remove the spin-on dielectric ( 120 ). In a via-first dual damascene method, a via ( 116 ) may be patterned and etched and the via ( 116 ) is filled with the spin-on dielectric ( 120 ). Then, the trench is patterned and etched while the spin-on dielectric ( 120 ) protects the bottom of the via ( 116 ). Finally, the spin-on dielectric ( 120 ) is removed using a dry strip process with a low ion energy plasma.
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