发明名称 Method of fabricating robust nucleation/seed layers for subsequent deposition/fill of metallization layers
摘要 A method for fabricating a seed layer. A seed layer ( 126 ) is deposited over a barrier layer ( 124 ) using a three-step process comprising a low AC bias power step, a high AC bias power step, and a lower/zero AC bias power step. The low AC bias power step provides low overhang. The high AC bias power step provides good sidewall coverage. The lower/zero AC bias step recovers areas exposed by re-sputtering during the high AC bias power step.
申请公布号 US2006024939(A1) 申请公布日期 2006.02.02
申请号 US20040903598 申请日期 2004.07.29
申请人 GRUNOW STEPHAN;PAPA RAO SATYAVOLU S;RUSSELL NOEL M 发明人 GRUNOW STEPHAN;PAPA RAO SATYAVOLU S.;RUSSELL NOEL M.
分类号 H01L21/3205;H01L21/4763 主分类号 H01L21/3205
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