发明名称 |
Method of fabricating robust nucleation/seed layers for subsequent deposition/fill of metallization layers |
摘要 |
A method for fabricating a seed layer. A seed layer ( 126 ) is deposited over a barrier layer ( 124 ) using a three-step process comprising a low AC bias power step, a high AC bias power step, and a lower/zero AC bias power step. The low AC bias power step provides low overhang. The high AC bias power step provides good sidewall coverage. The lower/zero AC bias step recovers areas exposed by re-sputtering during the high AC bias power step.
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申请公布号 |
US2006024939(A1) |
申请公布日期 |
2006.02.02 |
申请号 |
US20040903598 |
申请日期 |
2004.07.29 |
申请人 |
GRUNOW STEPHAN;PAPA RAO SATYAVOLU S;RUSSELL NOEL M |
发明人 |
GRUNOW STEPHAN;PAPA RAO SATYAVOLU S.;RUSSELL NOEL M. |
分类号 |
H01L21/3205;H01L21/4763 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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